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AOT462 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOT462 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT462 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 60V ID = 70A RDS(ON) < 18m (V GS = 10V) (VGS = 10V)
TO-220 D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation
B C
Maximum 60 20 70 70 120 26 101 100 50 -55 to 175
Units V V A A mJ W C
TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG
TC=100C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B
A
Steady-State Steady-State
Symbol RJA RJC
Typ 45 1.25
Max 60 1.5
Units C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT462
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C VDS=5V, ID=30A 2 120 14.5 25 50 0.73 1 70 1840 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 185 80 2.8 27.8 VGS=10V, VDS=30V, ID=30A 9.9 6.6 12 VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s 5.2 38 27 35 47 64 4.2 36 2400 18 30 3.1 Min 60 1 5 100 4 Typ Max Units V A nA V A m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Transconductance
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev0: Nov. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140 120 100 ID (A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 5V 20 VGS=4.5V 0 2 3 4 5 6 7 125C -40C 10V 80 6V 60 ID(A) 100 VDS=5V
40 25C
VGS(Volts) Figure 2: Transfer Characteristics
25 22 RDS(ON) (m) 19 VGS=10V 16 13 10 0 10 20 30 40 50 60 70 80 Normalized On-Resistance
2.2
1.8 VGS=10V, 30A 1.4
1
0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 ID=30A 35 30 RDS(ON) (m) 25 20 15 10 5 4 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -40C 0.001 0.0001 0.0 25C 125C IS (A) 10 1 0.1 0.01 100
125C
25C -40C
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 2500 VDS=30V ID=30A Capacitance (nF) Ciss
8 VGS (Volts)
2000
6
1500
4
1000 Crss
2
500
Coss
0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 RDS(ON) limited 100 ID (A) 10s Power (W)
0 0 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 10000 Rthjc=1.5C/W TC=25C 1000
100s 10 TJ(Max)=175C TC=25C 1 1 10 100 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) 10 1ms DC 10ms
100
10 0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZJC Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD Single Pulse Ton T 10 100
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300 250 Power Dissipation (W) 200 150 100 50 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Power De-rating (Note B) 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Current De-rating (Note B) Current rating ID(A) TA=25C 10 0.0001 0.001 0.01 0.1 1 Time in avalanche, t A (s) Figure 14: Single Pulse Avalanche capability 100
80
60
40
20
100 ID(A), Peak Avalanche Current
1 0.00001
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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